Keysight Technologies Simulation and Measurement-based X-parameter Models for Power Amplifiers with Envelope Tracking

A Hysteretic Two-phase Supply Modulator for Envelope Tracking RF Power Amplifiers

In this paper a two-phase supply modulator suitable for envelope tracking power amplifier is presented. The designed supply modulator has the linear assisted switching architecture. Two-phase architecture is used in order to reduce the output switching ripples. The proposed architecture uses hysteretic control instead of pulse width modulation (PWM) which significantly reduces the circuit compl...

Behavioral Modeling of Polar Power Amplifiers Based on X-parameters by Characterizing Envelope Path using Tunable Low-pass Filters

X-parameters are developed as a superset of S-parameters and they are suitable for modeling systems having only radio-frequency (RF) and DC ports. For a polar power amplifier (PA), the envelope of the input modulated signal is applied at the envelope port, which is neither an RF nor a DC port. In this case, X-parameter may fail to characterize the behavior of the envelope path and consequently ...

Keysight Technologies An Evaluation of X-parameter*, P2D and S2D Models for Characterizing Nonlinear Behavior in Active Devices

Envelope Tracking and Digital Pre-Distortion Test Solution for RF Amplifiers

Products: | R&S  SMW200A | R&S  FSW The R&S  SMW200A together with the R&S  FSW is a state of the art testing solution that significantly reduces the required hardware for testing power amplifiers with envelope tracking and/or digital pre-distortion. This application note introduces the test solution in detail and presents corresponding measurement examples.

Non-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application

A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...